Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts | Zendy

Zheng Zhang | Zendy; Junli Du | Zendy; Bing Li | Zendy; Shuhao Zhang | Zendy; Mengyu Hong | Zendy; Xiaomei Zhang | Zendy; Qingliang Liao | Zendy; Yue Zhang | Zendy

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Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts

Author(s) -

Zheng Zhang,

Junli Du,

Bing Li,

Shuhao Zhang,

Mengyu Hong,

Xiaomei Zhang,

Qingliang Liao,

Yue Zhang

Publication year - 2017

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4986098

Subject(s) - materials science , transistor , piezoresistive effect , piezoelectricity , field effect transistor , optoelectronics , schottky barrier , electrode , stress (linguistics) , doping , nanotechnology , composite material , voltage , electrical engineering , engineering , linguistics , chemistry , philosophy , diode

In this work, we fabricated a strain-gated piezoelectric transistor based on single In-doped ZnO nanobelt with ±(0001) top/bottom polar surfaces. In the vertical structured transistor, the Pt tip of the AFM and Au film are used as source and drain electrode. The electrical transport performance of the transistor is gated by compressive strains. The working mechanism is attributed to the Schottky barrier height changed under the coupling effect of piezoresistive and piezoelectric. Uniquely, the transistor turns off under the compressive stress of 806 nN. The strain-gated transistor is likely to have important applications in high resolution mapping device and MEMS devices

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