Single step vacuum-free and hydrogen-free synthesis of graphene

We report a modified method to grow graphene in a single-step process. It is based on chemical vapor deposition and considers the use of methane under extremely adverse synthesis conditions, namely in an open chamber without requiring the addition of gaseous hydrogen in any of the synthesis stages. The synthesis occurs between two parallel Cu plates, heated up via electromagnetic induction. The inductive heating yields a strong thermal gradient between the catalytic substrates and the surrounding environment, promoting the enrichment of hydrogen generated as fragments of the methane molecules within the volume confined by the Cu foils. This induced density gradient is due to thermo-diffusion, also known as the Soret effect. Hydrogen and other low mass molecular fractions produced during the process inhibit oxidative effects and simultaneously reduce the native oxide on the Cu surface. As a result, high quality graphene is obtained on the inner surfaces of the Cu sheets as confirmed by Raman spectroscopy