Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices | Zendy

Nan Zheng | Zendy; S. P. Ahrenkiel | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices

Author(s) -

Nan Zheng,

S. P. Ahrenkiel

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4985550

Subject(s) - nanowire , superlattice , epitaxy , transmission electron microscopy , materials science , heterojunction , metamorphic rock , nanomaterials , optoelectronics , chemical vapor deposition , gallium arsenide , nanotechnology , period (music) , condensed matter physics , geology , physics , geochemistry , layer (electronics) , acoustics

Metamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs/GaPAs short-period superlattices. The heterostructures incorporate strain-engineered GaPAs compositional grades on 6°-<111>B miscut GaAs substrates. Lateral diffusion within the SPS into vertically aligned, three-dimensional columns results in nanowires extending along <110>A directions with a lateral period of 70-90 nm. The microstructure is probed by transmission electron microscopy to confirm the presence of coherent GaAs nanowires within GaPAs barriers. The compositional profile is inferred from analysis of {200} dark-field image contrast and <210> lattice images

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research