Electrically injected GaAsBi/GaAs single quantum well laser diodes | Zendy

Juanjuan Liu | Zendy; Wenwu Pan | Zendy; Xiaoyan Wu | Zendy; Chunfang Cao | Zendy; Yaoyao Li | Zendy; Xiren Chen | Zendy; Yanchao Zhang | Zendy; Lijuan Wang | Zendy; Jinyi Yan | Zendy; Dongliang Zhang | Zendy; Yuxin Song | Zendy; Jun Shao | Zendy; Shumin Wang | Zendy

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Electrically injected GaAsBi/GaAs single quantum well laser diodes

Author(s) -

Juanjuan Liu,

Wenwu Pan,

Xiaoyan Wu,

Chunfang Cao,

Yaoyao Li,

Xiren Chen,

Yanchao Zhang,

Lijuan Wang,

Jinyi Yan,

Dongliang Zhang,

Yuxin Song,

Jun Shao,

Shumin Wang

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4985231

Subject(s) - molecular beam epitaxy , materials science , diode , laser , optoelectronics , atmospheric temperature range , quantum well , wavelength , continuous wave , semiconductor laser theory , range (aeronautics) , current density , epitaxy , optics , nanotechnology , physics , layer (electronics) , quantum mechanics , meteorology , composite material

We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77∼150 K, and reduced to 90 K in the range of 150∼273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77∼273 K

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