Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices | Zendy

Chandan Sharma | Zendy; Robert Laishram | Zendy; Amit | Zendy; D. S. Rawal | Zendy; Seema Vinayak | Zendy; Rajendra Singh | Zendy

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Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices

Author(s) -

Chandan Sharma,

Robert Laishram,

Amit,

D. S. Rawal,

Seema Vinayak,

Rajendra Singh

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4985057

Subject(s) - trapping , high electron mobility transistor , materials science , optoelectronics , transistor , wide bandgap semiconductor , voltage , condensed matter physics , physics , quantum mechanics , biology , ecology

This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation. De-trapping of charge carriers is one of the prominent reasons behind the kink effect. The commonly observed non-monotonic behavior of kink pattern is analyzed under two different device operating conditions and it is found that two different de-trapping mechanisms are responsible for a particular kink behavior. These different de-trapping mechanisms are investigated through a time delay analysis which shows the presence of traps with different time constants. Further voltage sweep and temperature analysis corroborates the finding that different de-trapping mechanisms play a role in kink behavior under different device operating conditions

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