Modeling of I-V characteristics in symmetric double-gate polysilicon thin-film transistors | Zendy

Xiaoyu Ma | Zendy; Songlin Chen | Zendy; Wanling Deng | Zendy; Junkai Huang | Zendy

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Modeling of I-V characteristics in symmetric double-gate polysilicon thin-film transistors

Author(s) -

Xiaoyu Ma,

Songlin Chen,

Wanling Deng,

Junkai Huang

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4985051

Subject(s) - thin film transistor , materials science , transistor , range (aeronautics) , optoelectronics , voltage , polysilicon depletion effect , surface (topology) , silicon , thin film , electrical engineering , gate oxide , nanotechnology , layer (electronics) , engineering , composite material , mathematics , geometry

A new closed-form approximation for surface potential and drain current (DC) in symmetric double-gate polysilicon thin-film transistors (DG poly-Si TFTs) is proposed. The solution of the surface potential is single-piece and suitable for a wide range of gate voltages under different conditions. A comparison with numerical results shows that this scheme gives an accurate description of surface potential. The development of surface-potential-based compact model for I-V characteristics is achieved based on this calculation. Finally, the validity of the model is verified by comparisons with various experimental data. It is showing that the model is accurate over a wide range of operation regions

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