Open AccessEffect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators
Author(s) -
Garuma Abdisa Denu,
Jiao Fu,
Zongchen Liu,
Jibran Hussain Mirani,
Hongxing Wang
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4984288
Subject(s) - thermoelastic damping , diamond , materials science , dissipation , resonator , silicon , zener diode , quality (philosophy) , condensed matter physics , thermal , nanomechanics , thermal conductivity , beam (structure) , composite material , optoelectronics , mechanics , thermodynamics , nanotechnology , physics , optics , transistor , quantum mechanics , voltage , atomic force microscopy
The effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied. Numerical simulation is performed to compare quality factors of the given materials. Results using Zener’s well-known approximation and recent developments of Lifshitz and Roukes models were used to model thermoelasticity effects. In the later model, the effect of thermal diffusion length is taken into account for determination of thermoelastic damping. Our results show that larger discrepancy is obtained between the two models for SiO2. The difference is pronounced when beam aspect ratio (L/w) is smaller. Such progresses will find potential applications in optimal design of high quality factor micrometer- and nanometer-scale electromechanical systems
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