Spatial structure of radio frequency ring-shaped magnetized discharge sputtering plasma using two facing ZnO/Al2O3 cylindrical targets for Al-doped ZnO thin film preparation
Author(s) -
Takashi Sumiyama,
Takaya Fukumoto,
Yasunori Ohtsu,
Tatsuo Tabaru
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4983851
Subject(s) - materials science , substrate (aquarium) , sputtering , cathode , plasma , doping , thin film , electrical resistivity and conductivity , trench , transmittance , optoelectronics , diffraction , silicon , optics , analytical chemistry (journal) , layer (electronics) , composite material , nanotechnology , chemistry , oceanography , physics , engineering , quantum mechanics , chromatography , geology , electrical engineering
Spatial structureof high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facingZnO/Al2O3 cylindrical targets mounted in ring-shaped hollowcathode has been measured and Al-doped ZnO (AZO) thin film is deposited without substrate heating. The plasma density hasa peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniformwith increasing the distance from the target cathode. A low ion current flowing to thesubstrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 –6.7×10-4 Ω cm can be prepared at a substrate room temperature. Thetransmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7nm at radial positions of r = 0, 15, 30, 40 mm, respectively, whilediffraction peakof AZO films is34.26°. The grains exhibit a preferential orientation along (002) axis
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