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A high-quality and highly-transparent AlN template was prepared by regrowth on asputter-deposited AlNbuffer layer. Thebuffer layer wasthermally annealed and then underwent AlN regrowth in metalorganic chemical vapor deposition(MOCVD). Thepeakwidth of (002) and (102) plane x-ray rocking curve was 104 arcsec and 290 arcsec,respectively, indicating a threading dislocation density <5.0 × 108cm−2. Dislocations were reduced via grain growth and morphologicalevolution. The absence of carbon impurity source in sputter deposition also resulted in animproved transparency. According to transmission and reflection measurements, theabsorption rateof λ=280 nm emission propagating through the template was less than 6%

High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes