Open AccessHigh-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes
Author(s) -
ChiaYen Huang,
Peï-Yu Wu,
Kai-Shiang Chang,
Yun-Hsiang Lin,
Wei-Chih Peng,
Yem-Yeu Chang,
J M Li,
HungWei Yen,
YewChung Sermon Wu,
Hideto Miyake,
HaoChung Kuo
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4983708
Subject(s) - materials science , metalorganic vapour phase epitaxy , sputtering , chemical vapor deposition , optoelectronics , dislocation , layer (electronics) , buffer (optical fiber) , sputter deposition , absorption edge , wide bandgap semiconductor , thin film , epitaxy , composite material , nanotechnology , band gap , telecommunications , computer science
A high-quality and highly-transparent AlN template was prepared by regrowth on asputter-deposited AlNbuffer layer. Thebuffer layer wasthermally annealed and then underwent AlN regrowth in metalorganic chemical vapor deposition(MOCVD). Thepeakwidth of (002) and (102) plane x-ray rocking curve was 104 arcsec and 290 arcsec,respectively, indicating a threading dislocation density <5.0 × 108cm−2. Dislocations were reduced via grain growth and morphologicalevolution. The absence of carbon impurity source in sputter deposition also resulted in animproved transparency. According to transmission and reflection measurements, theabsorption rateof λ=280 nm emission propagating through the template was less than 6%
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