On the role of the atomic bond types in light emission from Si nanoparticles | Zendy

A. A. GonzálezFernández | Zendy; Joan Juvert | Zendy; M. AcevesMijares | Zendy; Carlos Domı́nguez | Zendy

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On the role of the atomic bond types in light emission from Si nanoparticles

Author(s) -

A. A. GonzálezFernández,

Joan Juvert,

M. AcevesMijares,

Carlos Domı́nguez

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4983568

Subject(s) - photoluminescence , fabrication , materials science , silicon , luminescence , light emission , quantum dot , core (optical fiber) , wavelength , radiative transfer , nanoparticle , oxide , optoelectronics , silicon oxide , bond energy , spontaneous emission , nanotechnology , chemistry , optics , composite material , laser , molecule , metallurgy , physics , silicon nitride , medicine , alternative medicine , organic chemistry , pathology

We present an analysis of the relation between atomic and luminescent characteristics of a variety of Si-enriched Silicon Oxide films obtained by different techniques and various Si contents. Detailed studies of the Si 2p core level energy region and its components were carried out, as well as of Photoluminescence and its components. The results from such studies were correlated and analyzed. A combination of Quantum Confinement phenomena and the presence of radiative defects was identified as the cause for the light emission. A relation between the wavelength of the Photoluminescence due to Quantum Confinement, and the percentage of elemental Si bonds in the material was observed regardless of the fabrication technique; wile the wavelength of the emission caused by defects did not change except under very specific fabrication conditions. The results and conclusions allowed to establish a comparison parameter based on the material characteristics that can be used for all samples regardless of the fabrication method

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