Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition | Zendy

Isom Hilmi | Zendy; Andriy Lotnyk | Zendy; Jürgen W. Gerlach | Zendy; Philipp Schumacher | Zendy; B. Rauschenbach | Zendy

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Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb₂Te₃ thin films grown by pulsed laser deposition

Author(s) -

Isom Hilmi,

Andriy Lotnyk,

Jürgen W. Gerlach,

Philipp Schumacher,

B. Rauschenbach

Publication year - 2017

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4983403

Subject(s) - epitaxy , materials science , chalcogenide , thin film , pulsed laser deposition , heterojunction , optoelectronics , island growth , electron diffraction , van der waals force , transmission electron microscopy , layer (electronics) , nanotechnology , diffraction , optics , chemistry , physics , organic chemistry , molecule

An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application. In this paper, the epitaxial growth of an exemplary layered chalcogenide material, i.e., stoichiometric Sb2Te3 thin films, is reported. The films were produced on unreconstructed highly lattice-mismatched Si(111) substrates by pulsed laser deposition (PLD). The films were grown by vdW epitaxy in a two-dimensional mode. X-ray diffraction measurements and transmission electron microscopy revealed that the films possess a trigonal Sb2Te3 structure. The single atomic Sb/Te termination layer on the Si surface was formed initializing the thin film growth. This work demonstrates a straightforward method to deposit vdW-epitaxial layered chalcogenides and, at the same time, opens up the feasibility to fabricate chalcogenide vdW heterostructures by PLD

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