Open AccessRoom-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si
Author(s) -
A. Castellano,
L. Cerutti,
JeanBaptiste Rodriguez,
G. Narcy,
Alexandre Garreau,
F. Lelarge,
E. Tournié
Publication year - 2017
Publication title -
apl photonics
Language(s) - English
Resource type - Journals
ISSN - 2378-0967
DOI - 10.1063/1.4983389
Subject(s) - laser , continuous wave , materials science , diode , optoelectronics , molecular beam epitaxy , wavelength , optics , semiconductor laser theory , power (physics) , laser diode , epitaxy , physics , nanotechnology , layer (electronics) , quantum mechanics
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