Reduction of polymer residue on wet–transferred CVD graphene surface by deep UV exposure
Author(s) -
Ahmed Suhail,
Kamrul Islam,
Bing Li,
David Jenkins,
Guanzhong Pan
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4983185
Subject(s) - graphene , materials science , raman spectroscopy , x ray photoelectron spectroscopy , sheet resistance , polymer , electrical resistance and conductance , chemical engineering , graphene nanoribbons , fabrication , nanotechnology , optoelectronics , composite material , optics , engineering , medicine , physics , alternative medicine , layer (electronics) , pathology
Polymer residue from Polymethyl methacrylate (PMMA) on transferred graphene is a common issue for graphene devices. This residue affects the properties of graphene. Herein, we have introduced an improved technique to reduce the effect of this residue by deep UV (DUV) exposure of PMMA coated graphene samples within the wet transfer process. This technique has systematically been evaluated by optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and electrical measurements. The results show that this residue is effectively reduced on the graphene surface after DUV treatment. In addition, the electrical characteristics of transferred graphene confirm that the sheet resistance and contact resistance are reduced by about 60 and 80%, respectively, after the DUV exposure. Electrical current transport characteristics also show that minimizing this residue on the graphene surface gives less hysteresis of electronic transport in back-gate graphene field-effect transistors. Furthermore, repeating...
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