An InAs/high-k/low-k structure: Electron transport and interface analysis | Zendy

Toshimasa Ui | Zendy; Ryousuke Mori | Zendy; Son Phuong Le | Zendy; Yoshifumi Oshima | Zendy; T. Suzuki | Zendy

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An InAs/high-k/low-k structure: Electron transport and interface analysis

Author(s) -

Toshimasa Ui,

Ryousuke Mori,

Son Phuong Le,

Yoshifumi Oshima,

T. Suzuki

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4983176

Subject(s) - materials science , electron , scattering , spectroscopy , doping , electron scattering , condensed matter physics , optoelectronics , physics , optics , quantum mechanics

We fabricated and investigated an InAs/high-k/low-kstructure incomparison with an InAs/low-kstructure, wherethe former and the latter are respectively obtained by bonding ofInAs/Al2O3/AlN and InAs on low-k flexible substrates (FS).The InAs/high-k/low-k(InAs/Al2O3/AlN/FS) exhibits electron mobilities immune tointerfacefluctuation scattering, whereas this scattering is serious for the InAs/low-k(InAs/FS). Moreover, we find that electron sheet concentrations in theInAs/high-k/low-k are significantly higher than thosein the InAs/low-k. From InAs/Al2O3interface analysisby energy-dispersive X-ray spectroscopy and electron energy-loss spectroscopy, we find that the higherelectron concentrations can be attributed to natural modulation doping fromAl2O3 to InAs

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