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We fabricated and investigated an InAs/high-k/low-kstructure incomparison with an InAs/low-kstructure, wherethe former and the latter are respectively obtained by bonding ofInAs/Al2O3/AlN and InAs on low-k flexible substrates (FS).The InAs/high-k/low-k(InAs/Al2O3/AlN/FS) exhibits electron mobilities immune tointerfacefluctuation scattering, whereas this scattering is serious for the InAs/low-k(InAs/FS). Moreover, we find that electron sheet concentrations in theInAs/high-k/low-k are significantly higher than thosein the InAs/low-k. From InAs/Al2O3interface analysisby energy-dispersive X-ray spectroscopy and electron energy-loss spectroscopy, we find that the higherelectron concentrations can be attributed to natural modulation doping fromAl2O3 to InAs

An InAs/high-k/low-k structure: Electron transport and interface analysis