Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3 | Zendy

Koustav Ganguly | Zendy; Abhinav Prakash | Zendy; Bharat Jalan | Zendy; C. Leighton | Zendy

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Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO₃

Author(s) -

Koustav Ganguly,

Abhinav Prakash,

Bharat Jalan,

C. Leighton

Publication year - 2017

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4983039

Subject(s) - materials science , electron mobility , doping , dopant , condensed matter physics , epitaxy , annealing (glass) , electrical resistivity and conductivity , variable range hopping , scattering , heterojunction , optoelectronics , nanotechnology , optics , physics , layer (electronics) , engineering , electrical engineering , thermal conduction , composite material

The recently discovered high room temperature mobility in wide band gap semiconducting BaSnO3 is of exceptional interest for perovskite oxide heterostructures. Critical open issues with epitaxial films include determination of the optimal dopant and understanding the mobility-electron density (μ-n) relation. These are addressed here through a transport study of BaSnO3(001) films with oxygen vacancy doping controlled via variable temperature vacuum annealing. Room temperature n can be tuned from 5 × 1019 cm−3 to as low as 2 × 1017 cm−3, which is shown to drive a weak- to strong-localization transition, a 104-fold increase in resistivity, and a factor of 28 change in μ. The data reveal μ ∝ n0.65 scaling over the entire n range probed, important information for understanding mobility-limiting scattering mechanisms

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