Open AccessOut-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1−xKx(Zn1−yMny)2As2
Author(s) -
Ruichao Wang,
Z. X. Huang,
Guoqiang Zhao,
S. Yu,
Zheng Deng,
Chao Jin,
Quanjie Jia,
Yu Chen,
T. Y. Yang,
X. M. Jiang,
LiHui Cao
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4982713
Subject(s) - thin film , electrical resistivity and conductivity , materials science , magnetic semiconductor , substrate (aquarium) , analytical chemistry (journal) , magnetic anisotropy , semiconductor , band gap , condensed matter physics , optoelectronics , magnetization , magnetic field , chemistry , nanotechnology , electrical engineering , physics , oceanography , chromatography , quantum mechanics , geology , engineering
Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1−xKx(Zn1−yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost solely on the film growth direction
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