Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires
Author(s) -
Nasir Alfaraj,
Somak Mitra,
Feng Wu,
Idris A. Ajia,
Bilal Janjua,
Aditya Prabaswara,
Renad A. Aljefri,
Haiding Sun,
Tien Khee Ng,
Boon S. Ooi,
Iman S. Roqan,
Xiaohang Li
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4981252
Subject(s) - photoluminescence , heterojunction , exciton , materials science , indium , nanowire , optoelectronics , condensed matter physics , thermionic emission , physics , electron , quantum mechanics
The photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of generated photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjecture that the amount of generated photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained
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