Relation between Debye temperature and energy band gap of semiconductors | Zendy

B. Ullrich | Zendy; Mithun Bhowmick | Zendy; Haowen Xi | Zendy

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Relation between Debye temperature and energy band gap of semiconductors

Author(s) -

B. Ullrich,

Mithun Bhowmick,

Haowen Xi

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4980142

Subject(s) - debye model , semiconductor , condensed matter physics , band gap , debye , exponential function , lattice constant , materials science , work (physics) , wide bandgap semiconductor , electrical resistivity and conductivity , physics , thermodynamics , quantum mechanics , mathematics , mathematical analysis , diffraction

The work addresses an unresolved topic in solid-state physics, i.e., the dependence of the Debye temperature (TD) on the energy band gap (Eg) of semiconducting materials. The systematic calculation of TD by using the ratio of sound velocity and lattice constant from the literature resulted in the relation TD∝exp(Eg). The exponential relationship is confirmed by a theoretical model based on the microscopic analysis of the electrical conductivity in metals and semiconductors

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