Open AccessParasitic channel induced by an on-state stress in AlInN/GaN HEMTs
Author(s) -
S. Petitdidier,
Y. Guhel,
J. L. Trolet,
P. Mary,
Christophe Gaquière,
B. Boudart
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4980114
Subject(s) - transconductance , materials science , optoelectronics , parasitic element , stress (linguistics) , transistor , schottky barrier , threshold voltage , voltage , electrical engineering , engineering , diode , linguistics , philosophy
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