A nonvolatile memory device with very low power consumption based on the switching of a standard electrode potential | Zendy

Issei Sugiyama | Zendy; Ryota Shimizu | Zendy; T. Suzuki | Zendy; K. Yamamoto | Zendy; Hideyuki Kawasoko | Zendy; Susumu Shiraki | Zendy; Taro Hitosugi | Zendy

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A nonvolatile memory device with very low power consumption based on the switching of a standard electrode potential

Author(s) -

Issei Sugiyama,

Ryota Shimizu,

T. Suzuki,

K. Yamamoto,

Hideyuki Kawasoko,

Susumu Shiraki,

Taro Hitosugi

Publication year - 2017

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4980031

Subject(s) - materials science , electrode , optoelectronics , non volatile memory , bistability , electrolyte , substrate (aquarium) , heterojunction , commutation , voltage , electrical engineering , chemistry , oceanography , engineering , geology

We prepared a nonvolatile memory device that could be reversibly switched between a highand a low open-circuit voltage (Voc) regime. The device iscomposed of a solid electrolyte Li3PO4 film sandwiched between metalLi and Auelectrodes: aLi/Li3PO4/Au heterostructure, which was fabricated at room temperatureon a glass substrate. The bistable states at Voc ∼ 0.7 and∼0.3 V could be reversibly switched by applying an external voltage of 2.0 and 0.18 V,respectively. The formation and deformation of an ultrathin Au–Li alloy at theLi3PO4/Au electrode interface were the origin of the reversible switching

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