Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature | Zendy

Takuma Kobayashi | Zendy; Jun Suda | Zendy; Tsunenobu Kimoto | Zendy

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Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature

Author(s) -

Takuma Kobayashi,

Jun Suda,

Tsunenobu Kimoto

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4980024

Subject(s) - annealing (glass) , materials science , oxide , conduction band , oxidation process , analytical chemistry (journal) , thermal conduction , condensed matter physics , optoelectronics , metallurgy , chemical engineering , composite material , chemistry , physics , chromatography , quantum mechanics , engineering , electron

We found that post-oxidation Ar annealing at high temperature is effective in reducing the interface state density (Dit) near the conduction band edge (EC) of SiC (0001) MOS structures. The Dit reduction effect is comparable to that of nitridation process (annealing in nitric oxide (NO)) which has been a standard in SiC MOS technologies, without introducing any foreign atoms into the interface/oxide. The generation of fast interface states, which have been pointed out as a problem of nitridation process, is suppressed in the case of Ar annealing. In the proposed method, the final Dit values are mainly determined by the Ar annealing temperature rather than the initial oxidation temperature. The Dit values are not sensitive to the cooling speed, which means that rapid cooling is not necessary in the proposed method

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