Open AccessHigh pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
Author(s) -
Neil Moser,
Jonathan P. McCandless,
Antonio Crespo,
Kevin Leedy,
Andrew J. Green,
Eric R. Heller,
Kelson D. Chabak,
Nathalia Peixoto,
Gregg H. Jessen
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4979789
Subject(s) - doping , molecular beam epitaxy , materials science , mosfet , optoelectronics , charge carrier density , current density , analytical chemistry (journal) , epitaxy , charge density , charge (physics) , voltage , condensed matter physics , chemistry , transistor , electrical engineering , nanotechnology , physics , layer (electronics) , engineering , quantum mechanics , chromatography
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