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Vanadium in silicon: Lattice positions and electronic properties
Author(s) -
Jack Mullins,
В. П. Маркевич,
Matthew P. Halsall,
А. R. Peaker
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4979697
Subject(s) - vanadium , silicon , deep level transient spectroscopy , materials science , annealing (glass) , ion implantation , acceptor , analytical chemistry (journal) , impurity , crystallography , chemistry , ion , condensed matter physics , metallurgy , physics , organic chemistry , chromatography

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