Open AccessOn the integration of ultrananocrystalline diamond (UNCD) with CMOS chip
Author(s) -
Hongyi Mi,
Hao-Chih Yuan,
JungHun Seo,
Orlando Auciello,
Derrick C. Mancini,
Robert W. Carpick,
Sergio Pacheco,
Anirudha V. Sumant,
Zhenqiang Ma
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4979480
Subject(s) - materials science , cmos , diamond , nanoelectromechanical systems , pmos logic , transconductance , optoelectronics , nmos logic , chip , microelectromechanical systems , nanotechnology , transistor , voltage , electrical engineering , nanomedicine , engineering , nanoparticle , composite material
A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom