Influence of thickness on crystallinity in wafer-scale GaTe nanolayers grown by molecular beam epitaxy | Zendy

Che Jin Bae | Zendy; Jonathan McMahon | Zendy; Hermann Detz | Zendy; G. Strasser | Zendy; Junsung Park | Zendy; Erik Einarsson | Zendy; D. B. Eason | Zendy

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Influence of thickness on crystallinity in wafer-scale GaTe nanolayers grown by molecular beam epitaxy

Author(s) -

Che Jin Bae,

Jonathan McMahon,

Hermann Detz,

G. Strasser,

Junsung Park,

Erik Einarsson,

D. B. Eason

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4978776

Subject(s) - materials science , molecular beam epitaxy , crystallinity , epitaxy , wafer , raman spectroscopy , monoclinic crystal system , stress relaxation , gallium , gallium arsenide , optoelectronics , crystallography , substrate (aquarium) , thin film , x ray crystallography , diffraction , crystal structure , nanotechnology , optics , composite material , chemistry , metallurgy , layer (electronics) , geology , physics , creep , oceanography

We grew wafer-scale, uniform nanolayers of gallium telluride (GaTe) on gallium arsenide (GaAs) substrates using molecular beam epitaxy. These films initially formed in a hexagonal close-packed structure (h-GaTe), but monoclinic (m-GaTe) crystalline elements began to form as the film thicknesses increased to more than approximately 90 nm. We confirmed the coexistence of these two crystalline forms using x-ray diffraction and Raman spectroscopy, and we attribute the thickness-dependent structural change to internal stress induced by lattice mismatch with the substrate and to natural lattice relaxation at the growth conditions

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