Linear magnetoresistance in a topological insulator Ru2Sn3 | Zendy

Yuki Shiomi | Zendy; Eiji Saitoh | Zendy

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Linear magnetoresistance in a topological insulator Ru2Sn3

Author(s) -

Yuki Shiomi,

Eiji Saitoh

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4978773

Subject(s) - magnetoresistance , condensed matter physics , topological insulator , electrical resistivity and conductivity , materials science , magnetic field , metal–insulator transition , hall effect , thermal conduction , colossal magnetoresistance , weak localization , metal , physics , quantum mechanics , metallurgy , composite material

We have studied magnetotransport properties of a topological insulator materialRu2Sn3. Bulk single crystals of Ru2Sn3 weregrown by a Bi flux method. The resistivity is semiconducting at high temperatures above 160 K, whileit becomes metallic below 160 K. Nonlinear field dependence of Hall resistivity in the metallicregion shows conduction of multiple carriers at low temperatures. In the high-temperaturesemiconducting region, magnetoresistance exhibits a conventional quadratic magnetic-fielddependence. In the low-temperature metallic region, however, high-field magnetoresistance is clearlylinear with magneticfields, signaling a linear dispersion in the low-temperature electronicstructure. Small changes in the magnetoresistance magnitude with respect to the magnetic field angle indicatethat bulk electron carriers are responsible mainly for the observed linear magnetoresistance

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