Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction | Zendy

Chikako Yoshida | Zendy; Hideyuki Noshiro | Zendy; Yuichi Yamazaki | Zendy; Toshihiro Sugii | Zendy; T. Tanaka | Zendy; Atsushi Furuya | Zendy; Yuji Uehara | Zendy

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Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction

Author(s) -

Chikako Yoshida,

Hideyuki Noshiro,

Yuichi Yamazaki,

Toshihiro Sugii,

T. Tanaka,

Atsushi Furuya,

Yuji Uehara

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4978460

Subject(s) - condensed matter physics , micromagnetics , magnetization , tunnel magnetoresistance , perpendicular , voltage , magnetic anisotropy , anisotropy , materials science , magnetic field , field (mathematics) , electric field , physics , ferromagnetism , optics , geometry , mathematics , quantum mechanics , pure mathematics

The feasibility of a voltage assisted unipolar switching in perpendicular magnetic tunnel junction (MTJ) has been studied using a micromagnetic simulation. Assuming a linear modulation of anisotropy field with voltage, both parallel (P) to anti-parallel (AP) and AP to P switchings were observed by application of unipolar voltage pulse without external magnetic field assistance. In latter case, the final P state can only be achieved with an ultrashort voltage pulse which vanishes before spin transfer torque (STT) becomes dominant to restore the initial AP state. In addition, it was found that the larger change in anisotropy field is required for the MTJ with smaller diameter

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