Research Update: Enhancement of figure of merit for energy-harvesters based on free-standing epitaxial Pb(Zr0.52Ti0.48)0.99Nb0.01O3 thin-film cantilevers | Zendy

Minh D. Nguyen | Zendy; Evert Pieter Houwman | Zendy; Matthijn Dekkers | Zendy; Darrell G. Schlom | Zendy; Guus Rijnders | Zendy

Open Access

Research Update: Enhancement of figure of merit for energy-harvesters based on free-standing epitaxial Pb(Zr0.52Ti0.48)0.99Nb0.01O3 thin-film cantilevers

Author(s) -

Minh D. Nguyen,

Evert Pieter Houwman,

Matthijn Dekkers,

Darrell G. Schlom,

Guus Rijnders

Publication year - 2017

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4978273

Subject(s) - piezoelectricity , materials science , figure of merit , hysteresis , cantilever , piezoelectric coefficient , ferroelectricity , dielectric , epitaxy , condensed matter physics , optoelectronics , biasing , energy harvesting , thin film , energy (signal processing) , voltage , nanotechnology , composite material , electrical engineering , physics , engineering , layer (electronics) , quantum mechanics

All-oxide free-standing cantilevers were fabricated with epitaxial (001)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) and Pb(Zr0.52Ti0.48)0.99Nb0.01O3 (PNZT) as piezoelectric layers and SrRuO3 electrodes. The ferroelectric and piezoelectric hysteresis loops were measured. From the zero-bias values, the figure-of-merits (FOMs) for piezoelectric energy harvesting systems were calculated. For the PNZT cantilever, an extremely large value FOM = 55 GPa was obtained. This very high value is due to the large shifts of the hysteresis loops such that the zero-bias piezoelectric coefficient e31f is maximum and the zero-bias dielectric constant is strongly reduced compared to the value in the undoped PZT device. The results show that by engineering the self-bias field the energy-harvesting properties of piezoelectric systems can be increased significantly

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