Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2 | Zendy

Bart Vermeulen | Zendy; Jackson M. S. Wu | Zendy; Johan Swerts | Zendy; Sébastien Couet | Zendy; Iuliana Radu | Zendy; G. Groeseneken | Zendy; Christophe Detavernier | Zendy; Johanna K. Jochum | Zendy; M. J. Van Bael | Zendy; K. Temst | Zendy; Amit Kumar Shukla | Zendy; Shinji Miwa | Zendy; Yoshishige Suzuki | Zendy; Koen Martens | Zendy

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Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2

Author(s) -

Bart Vermeulen,

Jackson M. S. Wu,

Johan Swerts,

Sébastien Couet,

Iuliana Radu,

G. Groeseneken,

Christophe Detavernier,

Johanna K. Jochum,

M. J. Van Bael,

K. Temst,

Amit Kumar Shukla,

Shinji Miwa,

Yoshishige Suzuki,

Koen Martens

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4978007

Subject(s) - materials science , annealing (glass) , amorphous solid , atomic layer deposition , magnetic anisotropy , transmission electron microscopy , dielectric , bilayer , anisotropy , condensed matter physics , nuclear magnetic resonance , thin film , analytical chemistry (journal) , magnetization , nanotechnology , crystallography , magnetic field , optoelectronics , composite material , chemistry , optics , physics , biochemistry , chromatography , quantum mechanics , membrane

Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO\CoFe(B) interfaces or using an adjacent crystalline heavy metal film. Here, PMA is reported in a CoFeB\Ta bilayer deposited on amorphous high-kappa dielectric (relative permittivity kappa=20) HfO2, grown by atomic layer deposition (ALD). PMA with interfacial anisotropy energy K-i up to 0.49 mJ/m(2) appears after annealing the stacks between 200 degrees C and 350 degrees C, as shown with vibrating sample magnetometry. Transmission electron microscopy shows that the decrease of PMA starting from 350 degrees C coincides with the onset of interdiffusion in the materials. High-kappa dielectrics are potential enablers for giant voltage control of magnetic anisotropy (VCMA). The absence of VCMA in these experiments is ascribed to a 0.6 nm thick magnetic dead layer between HfO2 and CoFeB. The results show PMA can be easily obtained on ALD high-kappa dielectrics

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