HgCdTe-based heterostructures for terahertz photonics | Zendy

S. Ruffenach | Zendy; A. M. Kadykov | Zendy; V. V. Rumyantsev | Zendy; J. Torres | Zendy; Dominique Coquillat | Zendy; Dmytro B. But | Zendy; S. S. Krishtopenko | Zendy; C. Consejo | Zendy; W. Knap | Zendy; Stephan Winnerl | Zendy; M. Helm | Zendy; M. A. Fadeev | Zendy; Н. Н. Михайлов | Zendy; С. А. Дворецкий | Zendy; V. I. Gavrilenko | Zendy; S. V. Morozov | Zendy; F. Teppe | Zendy

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HgCdTe-based heterostructures for terahertz photonics

Author(s) -

S. Ruffenach,

A. M. Kadykov,

V. V. Rumyantsev,

J. Torres,

Dominique Coquillat,

Dmytro B. But,

S. S. Krishtopenko,

C. Consejo,

W. Knap,

Stephan Winnerl,

M. Helm,

M. A. Fadeev,

Н. Н. Михайлов,

С. А. Дворецкий,

V. I. Gavrilenko,

S. V. Morozov,

F. Teppe

Publication year - 2017

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4977781

Subject(s) - terahertz radiation , heterojunction , materials science , optoelectronics , photonics , semiconductor , terahertz gap , terahertz time domain spectroscopy , photoconductivity , terahertz spectroscopy and technology , terahertz metamaterials , optics , far infrared laser , physics , laser

Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing on gated devices presenting inverted band ordering, we evidence an enhancement of the terahertz photoconductive response close to the charge neutrality point and at the magnetic field driven topological phase transition. We also show the ability of these heterostructures to be used as terahertz imagers. Regarding terahertz emitters, we present results on stimulated emission of HgCdTe heterostructures in their conventional semiconductor state above 30 THz, discussing the physical mechanisms involved and promising routes towards the 5–15 THz frequency domain

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