Tunneling magnetoresistance sensors with different coupled free layers | Zendy

Yen-Fu Liu | Zendy; Xiaolu Yin | Zendy; Yi Yang | Zendy; Dan Ewing | Zendy; Paul J. De Rego | Zendy; S. H. Liou | Zendy

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Tunneling magnetoresistance sensors with different coupled free layers

Author(s) -

Yen-Fu Liu,

Xiaolu Yin,

Yi Yang,

Dan Ewing,

Paul J. De Rego,

S. H. Liou

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4977774

Subject(s) - ferrimagnetism , magnetoresistance , condensed matter physics , quantum tunnelling , annealing (glass) , materials science , coercivity , magnetic field , magnetization , giant magnetoresistance , tunnel magnetoresistance , nanostructure , inductive coupling , ferromagnetism , nanotechnology , physics , metallurgy , quantum mechanics

Large differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interfacial barrier layer but also affected largely by the magnetic or non-magnetic coupled free layers. All these parameters are sensitively controlled by the magnetic nanostructure, which can be tuned also by the magnetic annealing process. The optimized sensors exhibit a large field sensitivity of up to 261%/mT in the region of the reversal synthetic ferrimagnet at the pinned layers

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