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Dual referenced composite free layer design optimization for improving switching efficiency of spin-transfer torque RAM
Author(s) -
Roy Bell,
Jiaxi Hu,
R. H. Victora
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4977493
Subject(s) - anisotropy , spin transfer torque , composite number , torque , materials science , polarization (electrochemistry) , perpendicular , condensed matter physics , optoelectronics , physics , optics , composite material , chemistry , mathematics , geometry , thermodynamics , magnetization , quantum mechanics , magnetic field
We present a detailed numerical analysis of switching efficiency for the recently proposed dual referenced composite free layer structure with respect to Gilbert damping. Low anisotropy assistive layers enable reduction of Gilbert damping and an increase of partial spin polarization within those low anisotropy layers—not feasible with single layer structures that require high anisotropy for thermal stability. When the damping of the soft layers is ultra-low, an efficiency (kBT/μA) of 8.1 is achieved for the composite structure with perpendicular anisotropy. This represents an improvement of 286% and 913% relative to the state-of-the-art dual-referenced and conventional STT-RAM cells, respectively. Results for structures with longitudinal anisotropy are also presented. A linear calculation of the STT polarization pre-factor is also described that captures all reflections

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