Open AccessCurrent-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field
Author(s) -
N. Ohshima,
H. Sato,
Shun Kanai,
Justin Llandro,
Shunsuke Fukami,
F. Matsukura,
Hideo Ohno
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4977224
Subject(s) - condensed matter physics , magnetization , magnetic field , magnetic anisotropy , materials science , nanosecond , field (mathematics) , plane (geometry) , tunnel magnetoresistance , anisotropy , electric field , demagnetizing field , magnetic reactance , nuclear magnetic resonance , physics , ferromagnetism , optics , mathematics , quantum mechanics , pure mathematics , laser , geometry
We study current-induced magnetization switching properties of a magnetic tunnel junction with junction diameter of 19 nm and resistance-area product of 6 Ωμm2 in the nanosecond regime with and without in-plane magnetic field. At zero field, for both parallel (P)-to-anti-parallel (AP) and AP-to-P switchings, the probability of switching PSW approaches unity with the increase of pulse voltage duration τP. However, under in-plane magnetic field, PSW for P-to-AP switching starts to saturate at a value lower than unity with increasing τP, while AP-to-P switching remains the same as in the absence of in-plane magnetic field. This in-plane field dependence of PSW can be partially explained by the influence of electric-field modulation of magnetic anisotropy
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