Coexistence of tunneling magnetoresistance and Josephson effects in SFIFS junctions | Zendy

O. Vávra | Zendy; Rohit Soni | Zendy; A. Petraru | Zendy; N. Himmel | Zendy; I. Vávra | Zendy; Jaroslav Fabian | Zendy; H. Kohlstedt | Zendy; Ch. Strunk | Zendy

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Coexistence of tunneling magnetoresistance and Josephson effects in SFIFS junctions

Author(s) -

O. Vávra,

Rohit Soni,

A. Petraru,

N. Himmel,

I. Vávra,

Jaroslav Fabian,

H. Kohlstedt,

Ch. Strunk

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4976822

Subject(s) - quantum tunnelling , magnetoresistance , condensed matter physics , josephson effect , materials science , layer (electronics) , superconductivity , optoelectronics , nanotechnology , physics , magnetic field , quantum mechanics

We demonstrate an integration of tunneling magnetoresistance and the Josephson effects within one tunneling junction. Several sets of Nb-Fe-Al-Al2O3-Fe-Nb wafers with varying Al and Fe layers thickness were prepared to systematically explore the competition of TMR and Josephson effects. A coexistence of the critical current IC(dFe) and the tunneling magnetoresistance ratio T M R(dFe) is observed for iron layer dFe thickness range 1.9 and 2.9 nm. Further optimization such as thinner Al2O3 layer leads to an enhancement of the critical current and thus to an extension of the coexistence regime up to dFe≃3.9 nm Fe

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