Coexistence of two types of metal filaments in oxide memristors | Zendy

Dong Xu | Zendy; Xuanshuo Shangguan | Zendy; Shujie Wang | Zendy; Hongtao Cao | Zendy; Lingyan Liang | Zendy; H. L. Zhang | Zendy; Junhua Gao | Zendy; Weifeng Long | Zendy; Jingrui Wang | Zendy; Fei Zhuge | Zendy

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Coexistence of two types of metal filaments in oxide memristors

Author(s) -

Dong Xu,

Xuanshuo Shangguan,

Shujie Wang,

Hongtao Cao,

Lingyan Liang,

H. L. Zhang,

Junhua Gao,

Weifeng Long,

Jingrui Wang,

Fei Zhuge

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4976108

Subject(s) - protein filament , memristor , materials science , transmission electron microscopy , resistive random access memory , nanotechnology , valence (chemistry) , oxide , metal , optoelectronics , chemical physics , electrode , chemistry , composite material , electronic engineering , metallurgy , organic chemistry , engineering

One generally considers the conducting filament in ZnO-based valence change memristors (VCMs) as an aggregation of oxygen vacancies. Recently, the transmission electron microscopy observation showed the filament is composed of a Zn-dominated ZnOx. In this study, careful analysis of the temperature dependence of the ON state resistance demonstrates that the formation/rupture of a Zn filament is responsible for the resistive switching in ZnO VCMs. Cu/ZnO/Pt memristive devices can be operated in both VCM and ECM (electrochemical metallization memristor) modes by forming different metal filaments including Cu, Zn and a coexistence of these two filaments. The device operation can be reversibly switched between ECM and VCM modes. The dual mode operation capability of Cu/ZnO/Pt provides a wide choice of select devices for constructing memristive crossbar architectures

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