Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films | Zendy

Kaupo Kukli | Zendy; Marianna Kemell | Zendy; Marko Vehkamäki | Zendy; Mikko Heikkilä | Zendy; Kenichiro Mizohata | Zendy; Kristjan Kalam | Zendy; Mikko Ritala | Zendy; Markku Leskelä | Zendy; Ivan Kundrata | Zendy; K. Fröhlich | Zendy

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Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films

Author(s) -

Kaupo Kukli,

Marianna Kemell,

Marko Vehkamäki,

Mikko Heikkilä,

Kenichiro Mizohata,

Kristjan Kalam,

Mikko Ritala,

Markku Leskelä,

Ivan Kundrata,

K. Fröhlich

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4975928

Subject(s) - atomic layer deposition , materials science , tin , deposition (geology) , thin film , layer (electronics) , ternary operation , doping , resistive touchscreen , electrode , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , metallurgy , electrical engineering , paleontology , engineering , chromatography , sediment , computer science , biology , programming language

Thin solid films consisting of ZrO2 and Ta2O5were grown byatomic layerdeposition at 300 °C. Ta2O5films dopedwith ZrO2, TaZr2.75O8 ternary phase, or ZrO2doped with Ta2O5 were grown to thickness andcomposition depending on the number and ratio of alternating ZrO2 andTa2O5deposition cycles.All the filmsgrown exhibitedresistiveswitching characteristics between TiN and Pt electrodes, expressed by repetitive current-voltage loops.The most reliable windows between high and low resistive states were observed in Ta2O5films mixedwith relatively low amounts of ZrO2, providing Zr to Ta cation ratio of 0.2

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