Background–limited long wavelength infrared InAs/InAs1− xSbx type-II superlattice-based photodetectors operating at 110 K | Zendy

Abbas Haddadi | Zendy; Arash Dehzangi | Zendy; Sourav Adhikary | Zendy; Romain Chevallier | Zendy; Manijeh Razeghi | Zendy

Open Access

Background–limited long wavelength infrared InAs/InAs1− xSbx type-II superlattice-based photodetectors operating at 110 K

Author(s) -

Abbas Haddadi,

Arash Dehzangi,

Sourav Adhikary,

Romain Chevallier,

Manijeh Razeghi

Publication year - 2017

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4975619

Subject(s) - photodetector , responsivity , superlattice , materials science , optoelectronics , specific detectivity , dark current , infrared , wavelength , quantum efficiency , optics , physics

We report the demonstration of high-performance long-wavelength infrared (LWIR) nBnphotodetectors based on InAs/InAs1− xSbx type-II superlattices. A new saw-toothsuperlatticedesign was used to implement the electron barrier of the photodetectors. The deviceexhibited a cut-off wavelength of ∼10 μmat 77 K. The photodetector exhibited a peak responsivity of2.65 A/W, corresponding to a quantum efficiency of 43%. With an R × A of 664Ω·cm2and a dark current density of 8 × 10−5A/cm2, under −80 mV bias voltage at 77 K, the photodetector exhibited aspecific detectivity of 4.72 × 1011 cm·Hz/Wand a background–limited operating temperature of 110K

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