Open AccessElectrical properties of Si-doped GaN prepared using pulsed sputtering
Author(s) -
Yasuaki Arakawa,
Kohei Ueno,
Hideyuki Imabeppu,
Atsushi Kobayashi,
Jitsuo Ohta,
Hiroshi Fujioka
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4975056
Subject(s) - materials science , wurtzite crystal structure , doping , electron mobility , optoelectronics , sputtering , electrical resistivity and conductivity , wide bandgap semiconductor , sputter deposition , indium , thin film , analytical chemistry (journal) , nanotechnology , zinc , chemistry , metallurgy , engineering , chromatography , electrical engineering
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