Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition | Zendy

Yue Wang | Zendy; Tianjun Li | Zendy; Jian Wang | Zendy; Takashi Harumoto | Zendy; Tingting Jia | Zendy; Hideo Kimura | Zendy; Katsuyuki Nakada | Zendy; Shigeki Nakagawa | Zendy; Yoshio Nakamura | Zendy; Ji Shi | Zendy

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Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition

Author(s) -

Yue Wang,

Tianjun Li,

Jian Wang,

Takashi Harumoto,

Tingting Jia,

Hideo Kimura,

Katsuyuki Nakada,

Shigeki Nakagawa,

Yoshio Nakamura,

Ji Shi

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4974888

Subject(s) - tin , materials science , epitaxy , tetragonal crystal system , transmission electron microscopy , sputtering , layer (electronics) , ferroelectricity , coercivity , thin film , crystallography , analytical chemistry (journal) , metallurgy , nanotechnology , condensed matter physics , dielectric , crystal structure , optoelectronics , chemistry , physics , chromatography

BiFeO3/TiN/MgO (001) films have been prepared by magneton sputtering, where TiN serves as a conductive under layer. X-ray diffraction profiles and cross-sectional transmission electron microscopy images reveal that not only (001)-epitaxial BiFeO3 films are obtained, but also both tetragonal and rhombohedral phases co-exist in BiFeO3 films. Their crystallographic relationship is shown as following: tetragonal-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100] and rhombohedral-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100]. Besides, an oxidized TiN layer (∼ 20 nm) has also been detected between BiFeO3 and TiN layers and its formation may originate from oxygen inter-diffusion from BiFeO3 layer. Despite of the existence of the oxidized TiN layer, it does not affect the epitaxial growth of BiFeO3 films. On the other hand, the coercivity electric field obtained in ferroelectric loop of BiFeO3 is greatly enhanced to 49 MV/cm due to the existence of oxidized TiN layer

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