Open AccessGaAs/Ge/Si epitaxial substrates: Development and characteristics
Author(s) -
Yury N. Buzynin,
В. Г. Шенгуров,
Boris N. Zvonkov,
A. N. Buzynin,
Sergey A. Denisov,
N. V. Baidus,
M. M. Drozdov,
Д. А. Павлов,
P. A. Yunin
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4974498
Subject(s) - epitaxy , materials science , optoelectronics , metalorganic vapour phase epitaxy , fabrication , layer (electronics) , gallium arsenide , tantalum , chemical vapor deposition , silicon , surface roughness , surface finish , nanotechnology , metallurgy , composite material , medicine , alternative medicine , pathology
We developed high quality 2-inch GaAs/Ge/Si (100) epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum strip heated to 1400°C was used as the “hotwire”. The MOCVD method was used to grow a 1 μ GaAs layer on a Ge buffer. The TDD in the GaAs layers did not exceed (1–2)∙105 cm-2 and the surface RMS roughness value was under 1 nm
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