Research Update: Ionotronics for long-term data storage devices | Zendy

Y. Unutulmazsoy | Zendy; Rotraut Merkle | Zendy; I. Rastegar | Zendy; Joachim Maier | Zendy; J. Mannhart | Zendy

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Research Update: Ionotronics for long-term data storage devices

Author(s) -

Y. Unutulmazsoy,

Rotraut Merkle,

I. Rastegar,

Joachim Maier,

J. Mannhart

Publication year - 2017

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4974480

Subject(s) - materials science , diffusion , reaction rate constant , corrosion , computer data storage , kinetics , thin film , chemical kinetics , term (time) , chemical engineering , nanotechnology , computer science , metallurgy , thermodynamics , operating system , physics , quantum mechanics , engineering

Data storage materials suffer from limited lifetime. Thus, there is a necessity for new data storage systems for archiving purposes. Systems based on chemical reactions such as the oxidation of corrosion-resistant metals are attractive candidates because they offer in principle very long-term stability. We have therefore investigated oxidation kinetics of Cr, Al, Ti, V, Zn, Ni, and Co. Here we present the results and discuss in detail fundamental issues of thin film oxidation, the limits of diffusion controlled oxidation, and possible ways to increase the oxidation rate constants. Co showed the highest oxidation rate constant (kp = 2.5 × 10−9 cm2/s at 540 °C) and is therefore considered as a promising candidate for data archiving

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