Polarization of stacking fault related luminescence in GaN nanorods | Zendy

Г. Позина | Zendy; Mattias Forsberg | Zendy; Elena Alexandra Serban | Zendy; ChingLien Hsiao | Zendy; Muhammad Junaid | Zendy; Jens Birch | Zendy; M. A. Kaliteevski | Zendy

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Polarization of stacking fault related luminescence in GaN nanorods

Author(s) -

Г. Позина,

Mattias Forsberg,

Elena Alexandra Serban,

ChingLien Hsiao,

Muhammad Junaid,

Jens Birch,

M. A. Kaliteevski

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4974461

Subject(s) - nanorod , photoluminescence , materials science , wurtzite crystal structure , heterojunction , wide bandgap semiconductor , stacking , luminescence , optoelectronics , stacking fault , polarization (electrochemistry) , condensed matter physics , anisotropy , sputter deposition , epitaxy , optics , thin film , sputtering , nanotechnology , chemistry , nuclear magnetic resonance , zinc , physics , layer (electronics) , metallurgy

Linear polarization properties of light emission are presented for GaN nanorods (NRs) grown along [0001] direction on Si(111) substrates by direct-current magnetron sputter epitaxy. The near band gap photoluminescence (PL) measured at low temperature for a single NR demonstrated an excitonic line at similar to 3.48 eV and the stacking faults (SFs) related transition at similar to 3.43 eV. The SF related emission is linear polarized in direction perpendicular to the NR growth axis in contrast to a non-polarized excitonic PL. The results are explained in the frame of the model describing basal plane SFs as polymorphic heterostructure of type II, where anisotropy of chemical bonds at the interfaces between zinc blende and wurtzite GaN subjected to in-built electric field is responsible for linear polarization parallel to the interface planes. (C) 2017 Author(s).

Funding Agencies|Swedish Research Council [621-2012-4420]; Carl Tryggers foundation; Angpanneforeningen; Russian Science Foundation [16-12-10503]

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