Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon | Zendy

Hiromasa Murata | Zendy; Kaoru Toko | Zendy; Noriyuki Saitoh | Zendy; Noriko Yoshizawa | Zendy; Takashi Suemasu | Zendy

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Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon

Author(s) -

Hiromasa Murata,

Kaoru Toko,

Noriyuki Saitoh,

Noriko Yoshizawa,

Takashi Suemasu

Publication year - 2017

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4974318

Subject(s) - graphene , materials science , raman spectroscopy , amorphous solid , amorphous carbon , layer (electronics) , carbon fibers , substrate (aquarium) , nanotechnology , layer by layer , chemical engineering , optoelectronics , composite material , chemistry , composite number , crystallography , optics , physics , oceanography , engineering , geology

Multilayer graphene (MLG) growth on arbitrary substrates is desired for incorporating carbon wiring and heat spreaders into electronic devices. We investigated the metal-induced layer exchange growth of a sputtered amorphous C layer using Ni as a catalyst. A MLG layer uniformly formed on a SiO2 substrate at 600 °C by layer exchange between the C and Ni layers. Raman spectroscopy and electron microscopy showed that the resulting MLG layer was highly oriented and contained relatively few defects. The present investigation will pave the way for advanced electronic devices integrated with carbon materials

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