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Stochastic domain wall depinning in permalloy nanowires with various types of notches
Author(s) -
Y. Gao,
Biao You,
Hongshun Yang,
Qingfeng Zhan,
Zhenlei Li,
Na Lei,
Weisheng Zhao,
Jing Wu,
Hongqing Tu,
Junzhuan Wang,
Lujun Wei,
W. Zhang,
Yingqi Xu,
Juan Du
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4973647
Subject(s) - permalloy , nanowire , condensed matter physics , materials science , hysteresis , enhanced data rates for gsm evolution , domain wall (magnetism) , magnetic domain , transverse plane , magnetic field , physics , magnetization , nanotechnology , telecommunications , quantum mechanics , computer science , structural engineering , engineering
Stochastic phenomena in magnetic nanowires based on domain wall (DW) motion is scientifically important thus to understand and control such behaviors are very meaningful. Here we report on the investigation of pinning and depinning of DWs in permalloy nanowires with six types of longitudinally asymmetric notches using focused magneto-optic Kerr effect (FMOKE) magnetometer and magnetic force microscopy (MFM). The hysteresis loops obtained by FMOKE indicate the generation of one or two distinct depinning fields by creating one notch close to the edge of the nanowires, in comparison multiple depinning processes occur in the nanowires with two identical notches symmetrically placed along the transverse direction, indicating more remarkable stochastic DW depinning phenomena. The MFM images verify the existence of DW in each type of nanowires and the DW sizes in the latter kind of nanowires are generally larger than those in the former ones. These observations can be explained by considering the thermal perturbation and edge or surface roughness effects in nanowires

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