Open AccessUVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy
Author(s) -
Wei Kong,
Adam Roberts,
W. Y. Jiao,
John Fournelle,
T. H. Kim,
María Losurdo,
Henry O. Everitt,
April S. Brown
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4973637
Subject(s) - molecular beam epitaxy , photoluminescence , dislocation , materials science , ultraviolet , quantum efficiency , optoelectronics , ellipsometry , plasma , diffraction , quantum well , analytical chemistry (journal) , thin film , layer (electronics) , epitaxy , chemistry , optics , nanotechnology , physics , laser , quantum mechanics , chromatography , composite material
A high Al-content (y > 0.4) multi-quantum-well (MQW) structure with a quaternary InxAlyGa(1-x-y)N active layer was synthesized using plasma-assisted molecular beam epitaxy. The MQW structure exhibits strong carrier confinement and room temperature ultraviolet-B (UVB) photoluminescence an order of magnitude stronger than that of a reference InxAlyGa(1-x-y)N thin film with comparable composition and thickness. The samples were characterized using spectroscopic ellipsometry, atomic force microscopy, and high-resolution X-ray diffraction. Numerical simulations suggest that the UVB emission efficiency is limited by dislocation-related non-radiative recombination centers in the MQW and at the MQW - buffer interface. Emission efficiency can be significantly improved by reducing the dislocation density from 109cm−2 to 107cm−2 and by optimizing the width and depth of the quantum wells
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