Incorporation of Sb and As in MBE grown GaAsxSb1−x layers

With the increasing interest in low effective mass materials for intersubband devices,mixed As-Sb compounds, like GaAsxSb1−x or AlxIn1−xAsySb1−y, gain moreand more attention. The growth of these materials, however, still provides significantchallenges due to the complex interaction between As and Sb. In this work, we provide anin-depth study on the incorporation of Sb into the GaAsxSb1−x layers and compare our findings to thepresent literature on this topic. It is found that both the composition and the crystalquality of GaAsxSb1−x layers are strongly influenced by thegrowthrate due to the As-for-Sb exchangereaction which takes place at the growing surface, andthat high crystal quality can be achieved when the growth is performedunder Sb limited conditions