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With the increasing interest in low effective mass materials for intersubband devices,mixed As-Sb compounds, like GaAsxSb1−x or AlxIn1−xAsySb1−y, gain moreand more attention. The growth of these materials, however, still provides significantchallenges due to the complex interaction between As and Sb. In this work, we provide anin-depth study on the incorporation of Sb into the GaAsxSb1−x layers and compare our findings to thepresent literature on this topic. It is found that both the composition and the crystalquality of GaAsxSb1−x layers are strongly influenced by thegrowthrate due to the As-for-Sb exchangereaction which takes place at the growing surface, andthat high crystal quality can be achieved when the growth is performedunder Sb limited conditions

Incorporation of Sb and As in MBE grown GaAsxSb1−x layers