Combined anomalous Nernst effect and thermography studies of ultrathin CoFeB/Pt nanowires | Zendy

James Wells | Zendy; Ekaterina Selezneva | Zendy; Patryk Krzysteczko | Zendy; Xiukun Hu | Zendy; H. W. Schumacher | Zendy; Rhodri Mansell | Zendy; R. P. Cowburn | Zendy; Alexandre Cuenat | Zendy; Olga Kazakova | Zendy

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Combined anomalous Nernst effect and thermography studies of ultrathin CoFeB/Pt nanowires

Author(s) -

James Wells,

Ekaterina Selezneva,

Patryk Krzysteczko,

Xiukun Hu,

H. W. Schumacher,

Rhodri Mansell,

R. P. Cowburn,

Alexandre Cuenat,

Olga Kazakova

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4973196

Subject(s) - nanowire , materials science , nernst equation , substrate (aquarium) , nernst effect , nanoscopic scale , anisotropy , temperature gradient , thermography , perpendicular , voltage , condensed matter physics , optoelectronics , nanotechnology , optics , electrode , chemistry , electrical engineering , physics , infrared , oceanography , quantum mechanics , geometry , mathematics , engineering , geology

Using electrical and thermal measurements, we present a method for characterising the anomalous Nernst effect (ANE) within nanoscale devices implementing perpendicular anisotropy materials. Perpendicularly magnetised CoFeB/Pt nanowires were fabricated in close proximity to Pt heater elements on an electrically insulating substrate. The voltages induced within the magnetic material as a result of the ANE were recorded for increasing heater powers, and for both out-of-plane saturated states of the device. Scanning thermal probe microscopy was used to map the temperature distribution within the region of the device at a range of heater powers. By analysing the results from each thermography measurement, it was possible to correlate the temperature gradient induced at the magnetic nanowire against the anomalous Nernst voltage measured within the device. For the particular material, geometry and substrate used, a Nernst coefficient value KN = 2.3 μV(K.T)-1 was calculated. This combination of measurements can provide a powerful tool to characterise the ANE within a number of nanoscale systems, a necessary task for the future implementation and optimisation of the effect within spin-caloritronic devices

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