Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs | Zendy

Ivan Isakov | Zendy; Alexandra F. Paterson | Zendy; Olga Solomeshch | Zendy; Nir Tessler | Zendy; Qiang Zhang | Zendy; Jun Li | Zendy; Xixiang Zhang | Zendy; Zhuping Fei | Zendy; Martin Heeney | Zendy; Thomas D. Anthopoulos | Zendy

Open Access

Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

Author(s) -

Ivan Isakov,

Alexandra F. Paterson,

Olga Solomeshch,

Nir Tessler,

Qiang Zhang,

Jun Li,

Xixiang Zhang,

Zhuping Fei,

Martin Heeney,

Thomas D. Anthopoulos

Publication year - 2016

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4972988

Subject(s) - thin film transistor , materials science , optoelectronics , transistor , ternary operation , oxide , substrate (aquarium) , dopant , microelectronics , heterojunction , organic semiconductor , nanotechnology , electrical engineering , doping , layer (electronics) , computer science , oceanography , engineering , voltage , geology , metallurgy , programming language

We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2- b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT) and the p-type dopant C60F48 was employed, whereas the isotype In2O3/ZnO heterojunction was used for the nchannel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm2 /Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics

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