Open AccessAssessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects
Author(s) -
J. Dickens,
A. Neuber,
R. P. Joshi
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4972968
Subject(s) - impact ionization , ionization , photoexcitation , atomic physics , photoconductivity , anode , materials science , electron hole , electric field , electron ionization , electron , voltage , optoelectronics , chemistry , physics , ion , electrode , excited state , organic chemistry , quantum mechanics