Erratum: “Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties” [Appl. Phys. Lett. 109, 192903 (2016)]
Author(s) -
Sergei Zarubin,
Elena I. Suvorova,
Maksim V Spiridonov,
Dmitrii Negrov,
Аnna G. Chernikova,
Andrey M. Markeev,
A. Zenkevich
Publication year - 2016
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4972787
Subject(s) - tin , ferroelectricity , materials science , optoelectronics , nanotechnology , metallurgy , dielectric
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